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Process News Spring 2019 | OI Plasma Technology

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Process News Spring 2019 | OI Plasma Technology

NEWS

PROCESS NEWS A Newsletter from Oxford Instruments Plasma Technology Spring 2019

PLASMA.OXINST.COM

Welcome

which in turn releases new opportunities. We have etch & deposition processes to enable optimum device performances at excellent Cost of Ownership. GaN RF Devices For a some time now GaN has been proposed for RF devices up to 650V and whilst it has always had a place within military applications, it’s nowapproaching the stage when it can be offered to the general market. Companies are already offering the advantages of GaN: fast switching, reduced packaging & higher efficiency. The innovation around the manufacture of normally OFF (E mode) devices are bringing new ideas such as atomic layer etching & production atomic layer deposition into the mainstream. OIPT can offer these technologies on a single cluster system with industry standard cassette handling for high throughput. InP Lasers >Page 1 Page 2 Page 3 Page 4 Page 5 Page 6 Page 7 Page 8 Page 9 Page 10 Page 11 Page 12 Page 13 Page 14 Page 15 Page 16 Page 17 Page 18 Page 19 Page 20 Page 21 Page 22 Page 23 Page 24

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